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BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS

Designed for Complementary Use with BDX54, BDX54A, BDX54B and BDX54C 60 W at 25C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A
B C E
TO-220 PACKAGE (TOP VIEW)
1 2 3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25C case temperature (unless otherwise noted)
RATING BDX53 Collector-base voltage (IE = 0) BDX53A BDX53B BDX53C BDX53 Collector-emitter voltage (IB = 0) BDX53A BDX53B BDX53C Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 1) Continuous device dissipation at (or below) 25C free air temperature (see Note 2) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.48 W/C. 2. Derate linearly to 150C free air temperature at the rate of 16 mW/C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 8 0.2 60 2 -65 to +150 -65 to +150 -65 to +150 V A A W W C C C V V UNIT
MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
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1
BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BDX53 V(BR)CEO IC = 100 mA IB = 0 (see Note 3) BDX53A BDX53B BDX53C VCE = 30 V ICEO Collector-emitter cut-off current VCE = 30 V VCE = 40 V VCE = 50 V VCB = 45 V ICBO Collector cut-off current Emitter cut-off current Forward current transfer ratio Base-emitter saturation voltage Collector-emitter saturation voltage Parallel diode forward voltage VCB = 60 V VCB = 80 V VCB = 100 V IEBO hFE VBE(sat) VCE(sat) VEC VEB = VCE = IB = IB = IE = 5V 3V 12 mA 12 mA 3A IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = 3 A IC = 3 A IC = 3 A IB = 0 (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) 750 2.5 2 2.5 V V V BDX53 BDX53A BDX53B BDX53C BDX53 BDX53A BDX53B BDX53C MIN 45 60 80 100 0.5 0.5 0.5 0.5 0.2 0.2 0.2 0.2 2 mA mA mA V TYP MAX UNIT
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 2.08 62.5 UNIT C/W C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER ton toff
TEST CONDITIONS IC = 3 A VBE(off) = -4.5 V IB(on) = 12 mA RL = 10
MIN IB(off) = -12 mA tp = 20 s, dc 2%
TYP 1 5
MAX
UNIT s s
Turn-on time Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 40000
TCS120AG
COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
3*0 tp = 300 s, duty cycle < 2% IB = I C / 100 2*5
TCS120AH
hFE - Typical DC Current Gain
TC = -40C TC = 25C TC = 100C 10000
2*0
1*5
1000
1*0
0*5
VCE = 3 V tp = 300 s, duty cycle < 2% 100 0*5 1*0 IC - Collector Current - A 10
TC = -40C TC = 25C TC = 100C 1*0 IC - Collector Current - A 10
0 0*5
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C TC = 100C
TCS120AI
2*5
2*0
1*5
1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 IC - Collector Current - A 10
Figure 3.
MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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3
BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS SAFE OPERATING AREA
100
SAS120AD
DC Operation tp = 300 s, d = 0.1 = 10% IC - Collector Current - A
10
1*0
BDX53 BDX53A BDX53B BDX53C 0*1 1*0 10 100 1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C
TIS120AB
Figure 5.
4
MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS
MECHANICAL DATA TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20
o
3,96 3,71
10,4 10,0
2,95 2,54 6,6 6,0 15,90 14,55
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
2,74 2,34 5,28 4,88 2,90 2,40
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
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